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| Excelics DATA SHEET * * * * * * +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 80mA PER BIN RANGE 75 S 100 EFA480C Low Distortion GaAs Power FET 680 104 160 D D 72 620 155 G S G S 94 120 ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f= 2GHz f= 4GHz f= 2GHz f= 4GHz f= 2GHz O Chip Thickness: 75 13 microns All Dimensions In Microns MIN 32.0 16.0 TYP 34.0 34.0 18.0 12.5 40 MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10mA 800 560 1360 720 -2.0 1760 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 12 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -4V Ids Drain Current Idss 1.2A Igsf Forward Gate Current 120mA 20mA Pin Input Power 32dBm @3dB Compression o Tch Channel Temperature 175 C 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 11.4 W 9.5 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA480C DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.944 -119.8 0.931 -149.2 0.928 -161.0 0.927 -167.6 0.927 -172.0 0.927 -175.4 0.928 -178.1 0.928 179.6 0.929 177.5 0.930 175.6 0.931 173.9 0.932 172.3 0.933 170.7 0.934 169.2 0.935 167.7 0.937 166.3 0.938 164.9 0.939 163.6 0.941 162.3 0.942 160.9 8V, 1/2 Idss --- S21 --MAG ANG 9.669 115.5 5.352 97.6 3.646 88.3 2.756 81.6 2.213 75.9 1.849 70.7 1.587 66.0 1.389 61.4 1.235 57.0 1.112 52.8 1.010 48.7 0.925 44.7 0.853 40.8 0.790 37.0 0.735 33.3 0.687 29.7 0.643 26.2 0.604 22.8 0.569 19.5 0.537 16.2 --- S12 --MAG ANG 0.023 33.8 0.026 24.2 0.027 23.1 0.027 24.4 0.028 26.6 0.029 29.2 0.030 31.9 0.031 34.6 0.032 37.2 0.034 39.6 0.035 41.9 0.037 44.1 0.039 46.0 0.040 47.8 0.042 49.4 0.044 50.8 0.047 52.1 0.049 53.2 0.051 54.1 0.054 54.9 --- S22 --MAG ANG 0.515 -166.9 0.553 -172.1 0.564 -174.0 0.569 -175.0 0.574 -175.4 0.580 -175.7 0.585 -175.9 0.591 -176.0 0.597 -176.1 0.604 -176.3 0.612 -176.5 0.620 -176.7 0.628 -176.9 0.636 -177.2 0.645 -177.5 0.654 -177.9 0.664 -178.3 0.673 -178.8 0.683 -179.4 0.693 -179.9 The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each. |
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